Marek Kolenda, a PhD student from Vilnius University (Lithuania) participated in the International Workshop on Nitride Semiconductors 2018 (IWN2018), held in Kanazawa (Japan) on November 11‐16, 2018, with the poster “Carrier Extraction Enhancement at InN/p‐GaN Interface Heterojunction under Reverse Bias Voltage”, in which he presented good quality InN films, grown by pulsed MOVPE on the p-type GaN at 610°C with low defect concentration and efficient optoelectronic InN/p-GaN heterojunction was demonstrated by measuring carrier extraction under unbiased conditions, whereas applied bias voltage enhances significantly the external quantum efficiency in the ultraviolet to visible spectral region (300 – 500 nm).